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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP29B DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 80V(Min) *Collector-Emitter Saturation Voltage: VCE(sat) = 0.7V(Max.)@IC= 1.0A *Complement to Type TIP30B APPLICATIONS *Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Ttemperature Range VALUE 80 80 5 1 3 0.4 30 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.17 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TIP29B MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A 0.7 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V 1.3 V ICES Collector Cutoff Current VCE= 80V; VEB= 0 0.2 mA ICEO Collector Cutoff Current VCE= 60V; IB= 0 0.3 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.2A; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A; VCE= 4V 15 75 fT Current-Gain--Bandwidth Product IC= 0.2A ; VCE= 10V; f= 1MHz 3 MHz isc Websitewww.iscsemi.cn |
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